18 August 2011 Photoemission performance of gradient-doping transmission-mode GaAs photocathodes
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Abstract
With an attempt to improve the photoelectron emission efficiency, a gradient-doping structure proposed based on the Spicer's three-step model has been applied to the preparation of the transmission-mode GaAs photocathode via molecular beam epitaxy technique. The Cs-O activation phenomenon suggests that the gradient-doping structure can bring a potential photoemission capability with the increase of activation time, and the spectral response curves show that the gradient-doping photocathode can obtain a higher response capability in the entire waveband region, especially in the regions of short-wavelength threshold and long-wavelength threshold. By fitting quantum yield curves, the obtained cathode performance parameters such as electron average diffusion length and electron escape probability of the gradient-doping photocathode are greater than those of the uniform-doping one. The electron average diffusion length of the gradient-doping photocathode achieves 3.2 μm. The improvement in cathode performance of the gradient-doping photocathode could be ascribed to the downward gradient band-bending structure.
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Yijun Zhang, Yijun Zhang, Jun Niu, Jun Niu, Jijun Zou, Jijun Zou, Yajuan Xiong, Yajuan Xiong, Benkang Chang, Benkang Chang, Junju Zhang, Junju Zhang, Yujie Du, Yujie Du, "Photoemission performance of gradient-doping transmission-mode GaAs photocathodes", Proc. SPIE 8194, International Symposium on Photoelectronic Detection and Imaging 2011: Advances in Imaging Detectors and Applications, 81940N (18 August 2011); doi: 10.1117/12.898952; https://doi.org/10.1117/12.898952
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