18 August 2011 Design and characterization of radiation tolerant CMOS image sensor for space applications
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Proceedings Volume 8194, International Symposium on Photoelectronic Detection and Imaging 2011: Advances in Imaging Detectors and Applications; 81942N (2011); doi: 10.1117/12.900781
Event: International Symposium on Photoelectronic Detection and Imaging 2011, 2011, Beijing, China
Abstract
In this paper, we address the issues of designing a CMOS image sensor for space applications. The performance of a 4T pinned photodiode pixel under irradiation is shown and an example of a CMOS image sensor designed for sun tracking is given. It has been shown that the radiation tolerance level of the pixel is improved by using more advanced pixel architecture and more advanced fabrication process. Special measures are required in the sensor design to increases the sensor immunity on single event upset and latch-up.
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Xinyang Wang, Jan Bogaerts, Werner Ogiers, Gerd Beeckman, Guy Meynants, "Design and characterization of radiation tolerant CMOS image sensor for space applications", Proc. SPIE 8194, International Symposium on Photoelectronic Detection and Imaging 2011: Advances in Imaging Detectors and Applications, 81942N (18 August 2011); doi: 10.1117/12.900781; https://doi.org/10.1117/12.900781
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KEYWORDS
Sensors

CMOS sensors

Photodiodes

Sun

Image sensors

Transistors

Annealing

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