11 August 2011 Nonlinear free-carrier velocity induced by intense terahertz pulse in photoexcited semiconductor materials
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Abstract
The transient absorption bleaching and velocity overshoot of photoexcited carriers in GaAs and Si have been observed by the intense few-circle terahertz (THz) probe pulse in the optical pump-terahertz probe (OPTP) configuration. The free-carrier THz nonlinearity is attributed to the transient electron redistribution in conduction band induced by the strong THz electric field component.
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F. H. Su, G. Sharma, F. Blanchard, L. Razzari, A. Ayesheshim, R. Morandotti, T. Ozaki, F. A. Hegmann, "Nonlinear free-carrier velocity induced by intense terahertz pulse in photoexcited semiconductor materials", Proc. SPIE 8195, International Symposium on Photoelectronic Detection and Imaging 2011: Terahertz Wave Technologies and Applications, 81950T (11 August 2011); doi: 10.1117/12.900526; https://doi.org/10.1117/12.900526
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