28 November 2011 Research on the h-BN films for high frequency SAW devices
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Abstract
Hexagonal Boron Nitride (h-BN) films For high-frequency SAW devices were deposited on Ti/Al/Si(111) wafers by RF magnetron sputtering. The structure of h-BN films was investigated by fourier transform infrared (FTIR) spectroscopy and X-ray diffraction (XRD) spectra. And the surface morphology and piezoelectric properties of h-BN film was characterized by atomic force microscopy (AFM). And the characterization results show that when the RF power is 300w and other experimental parameters were fixed, h-BN films was in high purity and the c-axis oriented, h-BN films was in high purity and the c-axis oriented, and the particles of which are uniform and compact, roughness is 2.63nm with piezoelectric and piezoelectric response even, meet the requirements of high sound propagation speed and excellent piezoelectric for high frequency SAW devices. The studies of piezoelectric test of thin films have shown that PFM test method of atomic force microscopy was suitable for characterization of piezoelectric and properties of the piezoelectric response distribution of nano-structure semiconductor thin film.
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Lian-jie Sun, Lian-jie Sun, Xi-ming Chen, Xi-ming Chen, } "Research on the h-BN films for high frequency SAW devices", Proc. SPIE 8202, 2011 International Conference on Optical Instruments and Technology: Solid State Lighting and Display Technologies, Holography, Speckle Pattern Interferometry, and Micro/Nano Manufacturing and Metrology, 82020L (28 November 2011); doi: 10.1117/12.905402; https://doi.org/10.1117/12.905402
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