29 November 2011 Enhanced infrared normal spectral emissivity of microstructured silicon at 200 to 400 °C
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Abstract
The infrared normal spectral emissivity of microstructured silicon prepared by femtosecond laser was measured for the middle infrared waveband at temperature range 200 to 400°C. Compared to that of flat silicon, emissivity was enhanced over the entire wavelength range. For a sample with different spike height, the max emissivity at a temperature of 300°C emissivity nearly reaches to 0.99 . Although the average emissivity is not very higher, it can be used stably at more wide temperature ranges. These results show the potential for microstructured silicon to be used as a flat blackbody source or silicon-based devices.
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Guojin Feng, Yuan Li, Yu Wang, Ping Li, Tingting Guo, "Enhanced infrared normal spectral emissivity of microstructured silicon at 200 to 400 °C", Proc. SPIE 8202, 2011 International Conference on Optical Instruments and Technology: Solid State Lighting and Display Technologies, Holography, Speckle Pattern Interferometry, and Micro/Nano Manufacturing and Metrology, 82020M (29 November 2011); doi: 10.1117/12.905519; https://doi.org/10.1117/12.905519
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KEYWORDS
Silicon

Black bodies

Infrared radiation

Temperature metrology

Femtosecond phenomena

Semiconductor lasers

Metrology

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