28 November 2011 VLS growth of GaAs/InGaAs/GaAs axial double-heterostructure nanowires
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Abstract
GaAs/InxGa1-xAs/GaAs double-heterostructure nanowires were grown by Metal-organic Chemical Vapor Deposition on GaAs (1 1 1)B substrate using the vapor-liquid-solid growth method. By tuning the In content(x) from 0.2 to 1, we fabricated several GaAs/InxGa1-xAs/GaAs nanowire heterostructrues with different InxGa1-xAs parts and studied their characteristics. We found that all the InGaAs segments were successfully grown on GaAs sections, while the InAs nanowires were grown kinked or downward. By inserting a composition-graded InxGa1-xAs buffer segment between GaAs and InAs nanowires, high yield of straight GaAs/InxGa1-xAs/GaAs nanowire heterostructrues were realized.
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Kun Zhou, Xia Zhang, Xin Yan, Xiaolong Lv, Junshuai Li, Xiaomin Ren, Yongqing Huang, "VLS growth of GaAs/InGaAs/GaAs axial double-heterostructure nanowires", Proc. SPIE 8202, 2011 International Conference on Optical Instruments and Technology: Solid State Lighting and Display Technologies, Holography, Speckle Pattern Interferometry, and Micro/Nano Manufacturing and Metrology, 82020S (28 November 2011); doi: 10.1117/12.921312; https://doi.org/10.1117/12.921312
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