28 November 2011 VLS growth of GaAs/InGaAs/GaAs axial double-heterostructure nanowires
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GaAs/InxGa1-xAs/GaAs double-heterostructure nanowires were grown by Metal-organic Chemical Vapor Deposition on GaAs (1 1 1)B substrate using the vapor-liquid-solid growth method. By tuning the In content(x) from 0.2 to 1, we fabricated several GaAs/InxGa1-xAs/GaAs nanowire heterostructrues with different InxGa1-xAs parts and studied their characteristics. We found that all the InGaAs segments were successfully grown on GaAs sections, while the InAs nanowires were grown kinked or downward. By inserting a composition-graded InxGa1-xAs buffer segment between GaAs and InAs nanowires, high yield of straight GaAs/InxGa1-xAs/GaAs nanowire heterostructrues were realized.
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Kun Zhou, Kun Zhou, Xia Zhang, Xia Zhang, Xin Yan, Xin Yan, Xiaolong Lv, Xiaolong Lv, Junshuai Li, Junshuai Li, Xiaomin Ren, Xiaomin Ren, Yongqing Huang, Yongqing Huang, "VLS growth of GaAs/InGaAs/GaAs axial double-heterostructure nanowires", Proc. SPIE 8202, 2011 International Conference on Optical Instruments and Technology: Solid State Lighting and Display Technologies, Holography, Speckle Pattern Interferometry, and Micro/Nano Manufacturing and Metrology, 82020S (28 November 2011); doi: 10.1117/12.921312; https://doi.org/10.1117/12.921312


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