28 October 2011 Adsorption efficiency of cesium during the activation process for NEA GaAs photocathode
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Proceedings Volume 8205, 2011 International Conference on Photonics, 3D-Imaging, and Visualization; 82050P (2011) https://doi.org/10.1117/12.906263
Event: 2011 International Conference on Photonics, 3D-imaging, and Visualization, 2011, Guangzhou, China
Abstract
Photocathode materials with lower surface doping density need longer time to arise photocurrent during the first cesium activation process when the system's vacuum level is not high enough, and which can be found from the photocurrent curves arising during the activation process for Negative-electron-affinity (NEA) GaAs photocathodes. Meanwhile, with the enhancement of system's vacuum level, these differences in time will be not obvious. It is indicated that the adsorption efficiency of cesium on cathode surface has direct relationship with the surface doping density and the system's vacuum level, therefore, a mathematical model of which is established according to the experimental data in order to analyze the relationship quantitively. The simulation results by the model are in good agreement with the experimental phenomenon. This study is very important for further investigations on the structure design and preparation techniques for varied doping GaAs photocathode materials.
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Jun Niu, Ge Zhang, Yijun Zhang, Benkang Chang, "Adsorption efficiency of cesium during the activation process for NEA GaAs photocathode", Proc. SPIE 8205, 2011 International Conference on Photonics, 3D-Imaging, and Visualization, 82050P (28 October 2011); doi: 10.1117/12.906263; https://doi.org/10.1117/12.906263
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