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28 October 2011 Study on the parameters of surface potential barrier of NEA GaAs photocathode
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Proceedings Volume 8205, 2011 International Conference on Photonics, 3D-Imaging, and Visualization; 82050Q (2011) https://doi.org/10.1117/12.906121
Event: 2011 International Conference on Photonics, 3D-imaging, and Visualization, 2011, Guangzhou, China
Abstract
According to the ratio of the maximum values of photocurrents arising during the single Cs activation and the Cs-O activation phase for NEA GaAs photocathode, and combining the theoretical energy distributions of the electrons tunneling through the single and double potential barriers, a new method for evaluating the parameters of surface potential barrier of NEA GaAs photocathode was presented. The results obtained by this method greatly accord with the double-dipole model theory, and are in agreement with the results obtained by fitting the experimental curve for electrons energy distribution. The method is simple and available, and enriches one cheap approach for evaluating the activation effect and the surface characteristics of NEA GaAs photocathodes.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jun Niu, Dayong Huang, Yijun Zhang, and Benkang Chang "Study on the parameters of surface potential barrier of NEA GaAs photocathode", Proc. SPIE 8205, 2011 International Conference on Photonics, 3D-Imaging, and Visualization, 82050Q (28 October 2011); https://doi.org/10.1117/12.906121
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