12 January 2012 Properties of niobium oxide films deposited by pulsed DC reactive magnetron sputtering
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Proceedings Volume 8206, Pacific Rim Laser Damage 2011: Optical Materials for High Power Lasers; 82060M (2012) https://doi.org/10.1117/12.910188
Event: Pacific Rim Laser Damage Symposium: Optical Materials for High Power Lasers, 2011, Shanghai, China
Abstract
Nb2O5 thin films at various cathode power and substrate bias voltages were deposited by pulsed DC reactive magnetron sputtering of a metallic Nb target in a pure oxygen atmosphere. The characteristics of the films have been studied using spectrometer, atomic force microscopy (AFM), field emission scanning electron microscopy (FE-SEM). Laser damage tests at 1064 nm wavelength with pulse duration of 12 ns were conducted on the single-layer systems. Results indicate that the cathode power may not be an important impact-factor of the LIDT of Nb2O5 thin films but substrate bias voltage has significant influence on the laser resistance of Niobium oxides films. The maximum laser induced damage threshold (LIDT) of 28.8 J/cm2 was obtained for the film deposited at substrate bias voltage of -60V.
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Yuchuan Shao, Yuchuan Shao, Kui Yi, Kui Yi, Ming Fang, Ming Fang, Junchao Zhang, Junchao Zhang, } "Properties of niobium oxide films deposited by pulsed DC reactive magnetron sputtering", Proc. SPIE 8206, Pacific Rim Laser Damage 2011: Optical Materials for High Power Lasers, 82060M (12 January 2012); doi: 10.1117/12.910188; https://doi.org/10.1117/12.910188
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