Raman Study Of Bi2O3 Bistable Switches And Resistors For Neural Networks

J. E. Griffiths; E. G. Spencer

doi:10.1117/12.941936

19 January 1988 Raman Study Of Bi₂O₃ Bistable Switches And Resistors For Neural Networks

J. E. Griffiths, E. G. Spencer

Proceedings Volume 0822, Raman and Luminescence Spectroscopy in Technology; (1988) https://doi.org/10.1117/12.941936
Event: 31st Annual Technical Symposium on Optical and Optoelectronic Applied Sciences and Engineering, 1987, San Diego, CA, United States

Abstract

Bismuth oxide and some structurally related materials are potentially useful as programmable bistable switches and resistors in neural network computers. Reproducibility of the electrical properties of the thermally evaporated bismuth oxide thin films can sometimes be a problem. The chemical constitution of asprepared and annealed films was studied using Raman spectroscopic methods and revealed the presence of minute quantities of disordered elemental bismuth. Although bismuth is optically opaque in the visible, the quantities present are so small that optical transparency appears to be unaffected.

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J. E. Griffiths and E. G. Spencer "Raman Study Of Bi₂O₃ Bistable Switches And Resistors For Neural Networks", Proc. SPIE 0822, Raman and Luminescence Spectroscopy in Technology, (19 January 1988); https://doi.org/10.1117/12.941936

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