Structural Properties Of Heteroepitaxial Semiconductor Islands By Raman Microscopy

P M. F auchet; I. H. Campbell; M.Abdul Awal; E. H Lee

doi:10.1117/12.941930

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19 January 1988 Structural Properties Of Heteroepitaxial Semiconductor Islands By Raman Microscopy

P M. F auchet, I. H. Campbell, M.Abdul Awal, E. H Lee

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Proceedings Volume 0822, Raman and Luminescence Spectroscopy in Technology; (1988) https://doi.org/10.1117/12.941930
Event: 31st Annual Technical Symposium on Optical and Optoelectronic Applied Sciences and Engineering, 1987, San Diego, CA, United States

Abstract

We have used a Raman microprobe to characterize thin epitaxial layers of Ge and of GaAs on Ge, grown on [100] Si wafers patterned with SiO₂ islands of various sizes. We have observed changes in the Raman spectra which we explain in terms of stress, crystal-line orientation and crystalline quality variations. Changes in stress were observed after laser recrystallization of Ge on Si or SiO2, whereas the asdeposited Ge films were unstressed. The GaAs layers were not oriented in the [100] direction and also showed stress variations. This information can then be used to optimize the growth conditions. Such structures, combining an optoelectronic material (GaAs) with the most widely used semiconductor (Si) are attractive for high speed data processing.

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P M. F auchet, I. H. Campbell, M.Abdul Awal, and E. H Lee "Structural Properties Of Heteroepitaxial Semiconductor Islands By Raman Microscopy", Proc. SPIE 0822, Raman and Luminescence Spectroscopy in Technology, (19 January 1988); https://doi.org/10.1117/12.941930

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