3 February 2012 Measurement of the polarimetric response of suspended gallium doped silicon nanowires
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Proceedings Volume 8227, Three-Dimensional and Multidimensional Microscopy: Image Acquisition and Processing XIX; 82270P (2012); doi: 10.1117/12.908460
Event: SPIE BiOS, 2012, San Francisco, California, United States
Abstract
We describe an investigation of the polarimetric properties of suspended gallium doped silicon (Si:Ga) nanowires. Wire fabrication has been done with a combined gallium implantation (using a focused ion beam) and subsequent reactive ion and wet etches. A polarimetric microscope has been built and calibrated. Measurement of the polarimetric response shows a high reflectivity and strong retardance on reflection, with some samples showing low diattenuation, in contrast to conventional wire grid polarizers.
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Michael J. Theisen, Brian L. McIntyre, Thomas G. Brown, "Measurement of the polarimetric response of suspended gallium doped silicon nanowires", Proc. SPIE 8227, Three-Dimensional and Multidimensional Microscopy: Image Acquisition and Processing XIX, 82270P (3 February 2012); doi: 10.1117/12.908460; https://doi.org/10.1117/12.908460
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KEYWORDS
Nanowires

Polarimetry

Etching

Gallium

Silicon

Polarization

Microscopes

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