Paper
12 November 1987 Plasma Oxidation Of Silver And Zinc In Low-Emissivity Stacks
R. C. Ross, R, Sherman, R. A. Bunger, S. J. Nadel
Author Affiliations +
Abstract
The oxidation of silver and zinc films was studied by exposing metallic films to low-power 02 plasmas and analyzing the reacted films. This type of oxidation is an important phenomenon near the barrier layer in sputter-deposited metal-oxide/Ag/metal-oxide low-emissivity (low-e) coatings. Barrier layers generally are deposited on the Ag layer to prevent its degradation during subsequent 02 reactive sputtering. Both individual layers and complete stacks were studied. In addition, the thermal stability of plasma-oxidized Ag was examined. There are several important findings for the individual layers. Ag oxidizes rapidly in the plasma, forming Ag≈1.70 after complete reaction. Relative to the original Ag, the 9ide has -l.7 times greater thick-ness, >10 times higher electrical resistiv-ity (p), and increased surface roughness. Zn oxidizes slowly, at only -1% to 0.1% times the rate for Ag, and is thus more difficult to characterize. The results for individual layers are discussed as they relate to practical pro-perties of low-e stacks: the difficulty of obtaining complete barrier layer oxidation without partially degrading the Ag layer as well as the effects of heat treatment and aging.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. C. Ross, R, Sherman, R. A. Bunger, and S. J. Nadel "Plasma Oxidation Of Silver And Zinc In Low-Emissivity Stacks", Proc. SPIE 0823, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion VI, (12 November 1987); https://doi.org/10.1117/12.941867
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KEYWORDS
Silver

Plasma

Oxidation

Zinc

Oxides

Surface roughness

Zinc oxide

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