2 February 2012 Computer simulation of lipid bilayer detection using ion-sensitive field-effect transistors
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Abstract
Computer simulation of lipid bilayer detection using ion-sensitive field-effect transistors (ISFETs) is presented. Based on a previous work addressing DNA sensing using ISFETs, lipid bilayers on ISFET sensor surface is modeled. The model consists of (a) sensor surface, (b) Stern layer, (c) thin electrolytic layer, (d) lipid bilayer, and (e) semi-infinitely-extended electrolyte domain. Poisson-Boltzmann equation is solved to determine electrostatics taking into account mobile ion charges in electrolyte and lipid charges. The simulation successfully reproduces experimental results of output signal change due to positively-charged lipid molecular concentration, as well as salt ion concentration.
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Shigeyasu Uno, Shigeyasu Uno, "Computer simulation of lipid bilayer detection using ion-sensitive field-effect transistors", Proc. SPIE 8231, Nanoscale Imaging, Sensing, and Actuation for Biomedical Applications VIII, 82310V (2 February 2012); doi: 10.1117/12.906521; https://doi.org/10.1117/12.906521
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