A complete electrical and optical characterization for the high power diode laser module operating at
808 nm was performed. The laser diode operating at room temperature 25oC gave a higher slope
efficiency with low consumption electrical power and low threshold current lasing of 1.3 A.
Maximum slope efficiency of 42% with a final electrical to optical conversion efficiency of 28% at
807.96 nm central wavelength with line width of 3.59 nm at FWHM was investigated. The emitted
laser wavelength was measured and is affected by the temperature increasing; the diode peak
wavelength was shifted by 0.35nm/oC.
Moreover, the appropriate wavelength for pumping Nd3+ doped materials (around 808nm) was
obtained at the temperature range of (20-25oC). Typical 808nm diode laser output was obtained with
different driving input current at constant temperature of 25oC.
To illustrate the effect of changing diode temperature on the DEPSS output laser wavelength, the
diode operating temperature must varied to be (12, 25, and 36oC) and consequently, the pumping
central wavelength will be changed, we presented that the output DEPSS (Nd:YVO4) wavelength
does not change because the broad band absorbance property for the Nd:YVO4 crystals.
DEPSS (Nd:YVO4) laser system was implemented, and its optical characteristics were measured.
Stable wavelength of 1066.08nm with a linewidth of 1.48nm at FWHM at different diode pumped
powers (1, 1.4, and 1.75 Watt) and at constant temperature of 25oC was measured. With diode
pumping power of 6.6W, the output power was 3.273W with an output coupler reflectivity of 90%.
The Fundamental mode (TEM00) was examined, and the measured DEPSS divergence angle was