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8 February 2012 Gaussian-to-top-hat beam shaping: an overview of parameters, methods, and applications
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Abstract
Direct laser patterning of various materials is today widely used in several micro-system production lines like inkjet printing, solar cell technology, flat-panel display production, LEDs, OLEDs, semiconductors and medicine. Typically single-mode solid state lasers and their higher harmonics (e. g. 266, 355, 532 and 1064 nm) are used especially for machining of holes and grooves. The striking advantages of flat top intensity distributions compared to Gaussian beam profiles with respect to the efficiency and quality of these processes were already demonstrated. Here we will give an overview of parameters, methods and applications of Gaussian-to-top-hat beam shaping. The top hat field size can start from about 30 μm with no upper size limitation in the far field of the optics. Beam shaping for various wavelengths were realized with field geometries of squares, rectangles and circles. With LIMO's compact Gaussian-to-top-hat converter an inhomogeneity better than 5% contrast was reached. Special focus is put on the integration of Gaussian-to-top-hat beam shapers in fast scanning systems employing Galvo mirrors and a specially developed f-Theta lens to avoid destruction of the top hat profile within the scan field. Results with a 50x50μm2 top hat size (inhomogeneity down to <10%) in a scan area of 156x156mm² are presented. The minimal distortions of the top hat observed within the scan area make LIMO's compact Gaussian-to-top-hat converter excellently suited for industrial scanning applications, e.g. for the processing of solar panels.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
O. Homburg and T. Mitra "Gaussian-to-top-hat beam shaping: an overview of parameters, methods, and applications", Proc. SPIE 8236, Laser Resonators, Microresonators, and Beam Control XIV, 82360A (8 February 2012); doi: 10.1117/12.907914; https://doi.org/10.1117/12.907914
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