High power semiconductor lasers, single emitters and bars are developing fast.
During the last decade key parameters of diode lasers, such as beam quality, power, spatial and
spectral brightness, efficiency as well as reliability have been greatly improved. However, often
only individual parameters have been optimized, accepting an adverse effect in the other key
For demanding industrial applications in most cases it is not sufficient to achieve a record value in
one of the parameters, on the contrary it is necessary to optimize all the mentioned parameters
To be able to achieve this objective it is highly advantageous to have insight in the whole process
chain, from epitaxial device structure design and growth, wafer processing, mounting, heat sink
design, product development and finally the customer needs your final product has to fulfill.
In this publication an overview of recent advances in industrial diode lasers at TRUMPF will be
highlighted enabling advanced applications for both high end pump sources as well as highest
brightness direct diode.