14 February 2012 20 Watt CW TEM00 intracavity doubled optically pumped semiconductor laser at 532 nm
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Abstract
Optically-pumped semiconductor (OPS) lasers are power-scalable, wavelength-flexible, infrared brightness converters. Adding intra-cavity frequency doubling turns them into efficient, low noise, high power visible laser sources. We report on a laser combining an InGaAs gain medium with an LBO nonlinear crystal to produce more than 20 Watt CW in single transverse mode at 532 nm. Efficient cooling of the single gain chip using advanced mounting techniques is the key to making the laser reliable at high CW powers. A rugged and compact package withstands significant environmental excursions. The laser's low noise makes it suitable for demanding Ti:Sapphire pumping applications.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jill D. Berger, Jill D. Berger, Douglas W. Anthon, Douglas W. Anthon, Andrea Caprara, Andrea Caprara, Juan L. Chilla, Juan L. Chilla, Sergei V. Govorkov, Sergei V. Govorkov, Arnaud Y. Lepert, Arnaud Y. Lepert, Wayne Mefferd, Wayne Mefferd, Qi-Ze Shu, Qi-Ze Shu, Luis Spinelli, Luis Spinelli, } "20 Watt CW TEM00 intracavity doubled optically pumped semiconductor laser at 532 nm", Proc. SPIE 8242, Vertical External Cavity Surface Emitting Lasers (VECSELs) II, 824206 (14 February 2012); doi: 10.1117/12.907511; https://doi.org/10.1117/12.907511
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