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14 February 2012High-power quantum dot semiconductor disk lasers
The latest achievements of quantum dot based semiconductor disk lasers are reviewed. Several lasers operating at 1040
nm - 1260 nm were studied. All the structures were grown with molecular beam epitaxy on GaAs substrates. The
number of quantum dot layers was varied and the gain was provided either by the ground or the excited state transition of
the quantum dots. Frequency doubling of the lasers was demonstrated and the dual-gain laser geometry was found to be
practical solution for intracavity frequency conversion. Intracavity heat spreader and thinned device heat management
approaches are studied and compared.
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Jussi Rautiainen, Mantas Butkus, Igor Krestnikov, Edik U. Rafailov, Oleg Okhotnikov, "High-power quantum dot semiconductor disk lasers," Proc. SPIE 8242, Vertical External Cavity Surface Emitting Lasers (VECSELs) II, 824207 (14 February 2012); https://doi.org/10.1117/12.905067