14 February 2012 High-power quantum dot semiconductor disk lasers
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Abstract
The latest achievements of quantum dot based semiconductor disk lasers are reviewed. Several lasers operating at 1040 nm - 1260 nm were studied. All the structures were grown with molecular beam epitaxy on GaAs substrates. The number of quantum dot layers was varied and the gain was provided either by the ground or the excited state transition of the quantum dots. Frequency doubling of the lasers was demonstrated and the dual-gain laser geometry was found to be practical solution for intracavity frequency conversion. Intracavity heat spreader and thinned device heat management approaches are studied and compared.
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Jussi Rautiainen, Jussi Rautiainen, Mantas Butkus, Mantas Butkus, Igor Krestnikov, Igor Krestnikov, Edik U. Rafailov, Edik U. Rafailov, Oleg Okhotnikov, Oleg Okhotnikov, "High-power quantum dot semiconductor disk lasers", Proc. SPIE 8242, Vertical External Cavity Surface Emitting Lasers (VECSELs) II, 824207 (14 February 2012); doi: 10.1117/12.905067; https://doi.org/10.1117/12.905067
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