14 February 2012 IV-VI mid-infrared VECSEL on Si-substrate
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Abstract
Optically pumped VECSEL (vertical external cavity surface emitting lasers) based on IV-VI semiconductors grown on Si cover the entire wavelength range between 3.0 and 10 μm. Thanks to their simple structure and large wavelength coverage they are an interesting alternative laser technology to access the mid-infrared wavelength region. The active layers consist either of homogeneous "bulk" layers, double heterostructures or quantum well structures of the PbSe, PbTe or PbS material system. Maximum operation temperatures of 325 K are achieved with output powers above 200 mWp. Further, continuously tunable VECSEL are presented, emitting between 3.2 and 5.4 μm. The single emission mode is continuously tunable over 50-100 nm around the center wavelength, yielding an output power > 10 mWp. The axial symmetric emission beam has a half divergence angle of < 3.3°.
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M. Fill, M. Fill, F. Felder, F. Felder, M. Rahim, M. Rahim, A. Khiar, A. Khiar, R. Rodriguez, R. Rodriguez, H. Zogg, H. Zogg, A. Ishida, A. Ishida, } "IV-VI mid-infrared VECSEL on Si-substrate", Proc. SPIE 8242, Vertical External Cavity Surface Emitting Lasers (VECSELs) II, 82420H (14 February 2012); doi: 10.1117/12.905643; https://doi.org/10.1117/12.905643
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