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14 February 2012 Characterization of gain parameters in quantum-dot and quantum-well based VECSEL structures
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Abstract
We present gain characterization measurements for different VECSEL structures with quantum well (QW) and quantum dot (QD) layers in the active region. We use a high-precision reflectivity measurement setup to determine the change in reflectivity of the pumped gain chip with varying pulse fluences. In this way the gain saturation behavior and the smallsignal gain for several structures on different heat-spreaders were measured. The characterization was performed with femtosecond and picosecond pulses for varying pump powers and heat-sink temperatures. We measured a small-signal gain of up to 5% and saturation fluences in the range of 30-80 μJ/cm2 for both QW and QD VECSELs. With an additional measurement setup we determined the gain spectra of two gain chips using a tunable cw probe beam. We measured gain bandwidths FWHM of 26 nm (QD-structure) and 30 nm (QW-structure).
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M. Mangold, V. J. Wittwer, O. D. Sieber, M. Hoffmann, M. Golling, T. Südmeyer, and U. Keller "Characterization of gain parameters in quantum-dot and quantum-well based VECSEL structures", Proc. SPIE 8242, Vertical External Cavity Surface Emitting Lasers (VECSELs) II, 82420X (14 February 2012); https://doi.org/10.1117/12.905744
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