Surface plasmon-assisted nanolithography with nanometric accuracy

K. Ueno; H. Misawa

doi:10.1117/12.913653

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15 February 2012 Surface plasmon-assisted nanolithography with nanometric accuracy

K. Ueno, H. Misawa

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Proceedings Volume 8243, Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XVII; 82430F (2012) https://doi.org/10.1117/12.913653
Event: SPIE LASE, 2012, San Francisco, California, United States

Abstract

Advanced lithography systems, such as ArF immersion lithography, have achieved a 32 nm node^{1, 2} and are already used in electronic device development. However, the advanced lithography systems are not suitable for fabricating nanostructures, such as rectangular cuboids, triangular prisms, chains, and nanogaps. These nanostructures are being used for various applications that include plasmonic solar cells^3-5 and photonic crystal lasers.^{6, 7} In this proceeding, we report an innovative lithography system appropriate for fabricating such nano-patterns with nanometric accuracy based on plasmon-assisted photolithography. The key technology is the two-photon photochemical reaction of a photoresist induced by plasmonic near-field light and propagating light in a photoresist film. This propagating light is a radiation mode from a higher order of localized surface plasmon resonances scattered by metallic nanostructures. The system does not induce nano-pattern deformation at the time of mask release. This system presents a simple alternative for producing nano-patterns instead of using nanoimprinting.

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K. Ueno and H. Misawa "Surface plasmon-assisted nanolithography with nanometric accuracy", Proc. SPIE 8243, Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XVII, 82430F (15 February 2012); https://doi.org/10.1117/12.913653

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