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15 February 2012 Fabrication of photo-induced microstructure embedded inside ZnO crystal
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In this paper, micromachining inside of direct and indirect semiconductor, such as zinc oxide crystal (ZnO) and single-crystalline silicon(c-Si) using femtosecond laser pulses is successfully demonstrated. In the case of ZnO, oxygen vacancy or interstitial zinc was three-dimensionally induced by the near-infrared femtosecond laser pulse irradiation. The threshold energy for oxygen defect formation increased with increasing in a pulse width. The mechanism of the pulsewidth dependence of the damage threshold inside ZnO could be interpreted in terms of the excitonic Mott transition to the electron-hole plasma which depends on the electron plasma density induced by the laser irradiation. We have also successfully micromachined inside c-Si using infrared ultrashort laser pulses (λ = 1.24 μm). Optical microscope observation under an infrared lamp illumination indicates low density material or scattering structure was formed in the vicinity of the focal spot.
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Yuichiro Ishikawa, Yasuhiko Shimotsuma, Akio Kaneta, Masaaki Sakakura, Masayuki Nishi, Kiyotaka Miura, Kazuyuki Hirao, and Yoichi Kawakami "Fabrication of photo-induced microstructure embedded inside ZnO crystal", Proc. SPIE 8243, Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XVII, 82430N (15 February 2012);

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