15 February 2012 Fabrication of photo-induced microstructure embedded inside ZnO crystal
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In this paper, micromachining inside of direct and indirect semiconductor, such as zinc oxide crystal (ZnO) and single-crystalline silicon(c-Si) using femtosecond laser pulses is successfully demonstrated. In the case of ZnO, oxygen vacancy or interstitial zinc was three-dimensionally induced by the near-infrared femtosecond laser pulse irradiation. The threshold energy for oxygen defect formation increased with increasing in a pulse width. The mechanism of the pulsewidth dependence of the damage threshold inside ZnO could be interpreted in terms of the excitonic Mott transition to the electron-hole plasma which depends on the electron plasma density induced by the laser irradiation. We have also successfully micromachined inside c-Si using infrared ultrashort laser pulses (λ = 1.24 μm). Optical microscope observation under an infrared lamp illumination indicates low density material or scattering structure was formed in the vicinity of the focal spot.
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Yuichiro Ishikawa, Yuichiro Ishikawa, Yasuhiko Shimotsuma, Yasuhiko Shimotsuma, Akio Kaneta, Akio Kaneta, Masaaki Sakakura, Masaaki Sakakura, Masayuki Nishi, Masayuki Nishi, Kiyotaka Miura, Kiyotaka Miura, Kazuyuki Hirao, Kazuyuki Hirao, Yoichi Kawakami, Yoichi Kawakami, "Fabrication of photo-induced microstructure embedded inside ZnO crystal", Proc. SPIE 8243, Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XVII, 82430N (15 February 2012); doi: 10.1117/12.908190; https://doi.org/10.1117/12.908190

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