High-throughput process parallelization for laser surface modification on Si-solar cells: determination of the process window

Viktor Schütz; Alexander Horn; Uwe Stute

doi:10.1117/12.907972

24 February 2012 High-throughput process parallelization for laser surface modification on Si-solar cells: determination of the process window

Viktor Schütz; Alexander Horn; Uwe Stute

Author Affiliations +

Proceedings Volume 8244, Laser-based Micro- and Nanopackaging and Assembly VI; 82440X (2012) https://doi.org/10.1117/12.907972
Event: SPIE LASE, 2012, San Francisco, California, United States

Abstract

The laser is an extremely suitable non-contact tool for fast and automated in-line processes for example used to improve the efficiency of solar cells. With ultra-short pulsed laser radiation it is possible to decrease the reflectivity by modifying the surface topology of silicon. For the proposed modification, the optimum process window for altering the silicon surface topology on a micrometer scale is found at small laser fluencies at finite repetition rates. A promising up scaling method is process parallelization using in parallel a multiple set of interaction zones with the optimized process characteristics for single process interaction. Based on the single process, required laser process parameters and optical parameters for parallel processing are derived theoretically in order to enable a wafer processing in standard cycle times. Exemplarily 5-inch mc-silicon solar wafers are machined using a linear 7-times diffractive optical element (DOE), and in a second step solar cells are built up to determine the efficiency gain by the laser surface modification. A preliminary absolute efficiency gain of Δη > 0.2 % is achieved.

Citation Download Citation

Viktor Schütz, Viktor Schütz, Alexander Horn, Alexander Horn, Uwe Stute, Uwe Stute, } "High-throughput process parallelization for laser surface modification on Si-solar cells: determination of the process window", Proc. SPIE 8244, Laser-based Micro- and Nanopackaging and Assembly VI, 82440X (24 February 2012); doi: 10.1117/12.907972; https://doi.org/10.1117/12.907972

ACCESS THE FULL ARTICLE

PERSONAL SIGN IN
Full access may be available with your subscription

Email or Username Forgot your username?

Password Forgot your password?

Show

Remember Email/Username on this computer

Remember Password

No SPIE account? Create an account
or Institutional Sign In via Shibboleth

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $14.40

Non-members: $18.00 ADD TO CART

Show All Keywords

Keywords/Phrases

Search In:

Publication Years