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24 February 2012High-throughput process parallelization for laser surface modification on Si-solar cells: determination of the process window
The laser is an extremely suitable non-contact tool for fast and automated in-line processes for example used to improve
the efficiency of solar cells. With ultra-short pulsed laser radiation it is possible to decrease the reflectivity by modifying
the surface topology of silicon. For the proposed modification, the optimum process window for altering the silicon
surface topology on a micrometer scale is found at small laser fluencies at finite repetition rates. A promising up scaling
method is process parallelization using in parallel a multiple set of interaction zones with the optimized process
characteristics for single process interaction. Based on the single process, required laser process parameters and optical
parameters for parallel processing are derived theoretically in order to enable a wafer processing in standard cycle times.
Exemplarily 5-inch mc-silicon solar wafers are machined using a linear 7-times diffractive optical element (DOE), and in
a second step solar cells are built up to determine the efficiency gain by the laser surface modification. A preliminary
absolute efficiency gain of Δη > 0.2 % is achieved.
Viktor Schütz,Alexander Horn, andUwe Stute
"High-throughput process parallelization for laser surface modification on Si-solar cells: determination of the process window", Proc. SPIE 8244, Laser-based Micro- and Nanopackaging and Assembly VI, 82440X (24 February 2012); https://doi.org/10.1117/12.907972
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Viktor Schütz, Alexander Horn, Uwe Stute, "High-throughput process parallelization for laser surface modification on Si-solar cells: determination of the process window," Proc. SPIE 8244, Laser-based Micro- and Nanopackaging and Assembly VI, 82440X (24 February 2012); https://doi.org/10.1117/12.907972