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28 February 2012XPS study of InP/InGaAs/InGaAsP microstructures irradiated with ArF laser in air and deionized water
Excimer lasers, due to their compatibility with a large-scale industrial production, are attractive tools for precise
processing of photonic and microelectronic materials. In this article, we discuss the effect of ArF excimer laser defect
formation on the surface of InP/InGaAs/InGaAsP quantum well (QW) microstructures irradiated in air and deionized (DI)
water environments. Structural defects on surfaces of such QW materials have been known to induce vacancy diffusion
towards the QW region and lead to the so called quantum well intermixing (QWI) effect during the rapid thermal
annealing step. Excimer lasers have been used to create surface defects on InP/InGaAs/InGaAsP microstructure and
induce QWI during high temperature annealing. Chemical composition of the QW microstructures irradiated with ArF
laser in air and DI water is studied with X-ray photoelectron spectroscopy to investigate both the formation and role of
the surface defects in the laser-induced QWI process.
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Neng Liu, Khalid Moumanis, Sonia Blais, Jan J. Dubowski, "XPS study of InP/InGaAs/InGaAsP microstructures irradiated with ArF laser in air and deionized water," Proc. SPIE 8245, Synthesis and Photonics of Nanoscale Materials IX, 82450E (28 February 2012);