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22 February 2012 All-semiconductor-based narrow linewidth high-power laser system for laser communication applications in space at 1060 nm
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Abstract
We demonstrate environmental test results of a compact high-power master oscillator (MO) power amplifier (PA) laser module emitting near 1064 nm. The module is micro-integrated on a footprint of 50 × 10mm2, features an output power of 1 W, an intrinsic linewidth of 3.6 kHz, and a FWHM linewidth of 100 kHz. Results of lifetime tests and vibrational tests will be presented. Furthermore, we introduce tuning characteristics of a distributed Bragg reflector laser that can be used as a master oscillator. 2 nm of fast tuneability is realized by placing on-chip heaters close to the Bragg grating.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Stefan Spiessberger, Max Schiemangk, Alexander Sahm, Frank Bugge, Jörg Fricke, Hans Wenzel, Andreas Wicht, Götz Erbert, and Günther Tränkle "All-semiconductor-based narrow linewidth high-power laser system for laser communication applications in space at 1060 nm", Proc. SPIE 8246, Free-Space Laser Communication Technologies XXIV, 82460I (22 February 2012); https://doi.org/10.1117/12.907019
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