Materials development for photo-inhibited super-resolution (PINSR) lithography

Darren L. Forman; Gerrit L. Heuvelman; Robert R. McLeod

doi:10.1117/12.908512

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8 February 2012 Materials development for photo-inhibited super-resolution (PINSR) lithography

Darren L. Forman, Gerrit L. Heuvelman, Robert R. McLeod

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Proceedings Volume 8249, Advanced Fabrication Technologies for Micro/Nano Optics and Photonics V; 824904 (2012) https://doi.org/10.1117/12.908512
Event: SPIE MOEMS-MEMS, 2012, San Francisco, California, United States

Abstract

Progress in materials for radical initiated, radical inhibited super-resolution lithography is reported. The photochemistry and optical system is described, with a brief discussion on the theory of operation. A motivation is presented for developing a new material that may be used as a spinnable photoresist, and qualitative resist requirements are discussed. Results from FTIR experiments suggest how viscosity and monomer type may affect resist performance. Finally, focused beam photoinhibition experiments on a novel photoresist are presented.

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Darren L. Forman, Gerrit L. Heuvelman, and Robert R. McLeod "Materials development for photo-inhibited super-resolution (PINSR) lithography", Proc. SPIE 8249, Advanced Fabrication Technologies for Micro/Nano Optics and Photonics V, 824904 (8 February 2012); https://doi.org/10.1117/12.908512

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