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14 February 2012 Monitoring of the formation of a photosensitive device by electric breakdown of an impurity containing oxide in a MOS capacitor
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Abstract
The formation of an photosensitive device due to the local breakdown in an MOS structure with an impurity containing oxide layer has been monitored. A stepwise breakdown of the oxide layer resulted in the formation of a diode like characteristics with further on stable current-voltage characteristics. Under illumination with white and blue light we found a high photosensitivity of the resulting structure, probably due to the formation of a local p-n junction due to out-diffusion from the oxide of n-type dopants into the underlying silicon substrate. Using a blue light LED illumination during the monitoring of the device formation enables the identification of the moment, when a high ratio between photo- and dark current is obtained.
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Raffaele Di Giacomo, Giovanni Landi, Christian Boit, and Heinz C. Neitzert "Monitoring of the formation of a photosensitive device by electric breakdown of an impurity containing oxide in a MOS capacitor", Proc. SPIE 8249, Advanced Fabrication Technologies for Micro/Nano Optics and Photonics V, 824919 (14 February 2012); https://doi.org/10.1117/12.908760
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