Invited Paper Multiple-Quantum-Well CCD Spatial Light Modulators

Brian F. Aull; Barry E. Burke; Kirby B. Nichols; William D. Goodhue

doi:10.1117/12.941978

19 February 1988 Invited Paper Multiple-Quantum-Well CCD Spatial Light Modulators

Brian F. Aull, Barry E. Burke, Kirby B. Nichols, William D. Goodhue

Proceedings Volume 0825, Spatial Light Modulators and Applications II; (1988) https://doi.org/10.1117/12.941978
Event: 31st Annual Technical Symposium on Optical and Optoelectronic Applied Sciences and Engineering, 1987, San Diego, CA, United States

Abstract

We review previously reported results on the fabrication and operation of spatial light modulators which use electroabsorption in multiple-quantum-well (MQW) structures. These devices are electrically addressed by clocking a pattern of charge packets into a charge-coupled device (CCD). At each CCD pixel the amount of stored charge determines the electric field across the underlying MQW structure, which in turn determines the optical transmission of the device near the band-edge quantum-well excitors peak. The light is incident normal to the wafer surface and enters the device through semi-transparent CCD gates. Both 16-stage and 32-stage one-dimensional devices and 16-by-16 two-dimensional devices have been fabricated on epitaxial layers containing GaAs/AlGaAs MOW structures for operation in the 0.85-μm region and also on epitaxial layers containing InGaAs/GaAs MQW structures for operation above 0.9 μm. The one-dimensional devices have been operated as spatial light modulators at low CCD clock frequencies (up to 1 MHz); they display modulation depths far superior to CCD spatial light modulators fabricated on bulk GaAs.

Citation Download Citation

Brian F. Aull, Barry E. Burke, Kirby B. Nichols, and William D. Goodhue "Invited Paper Multiple-Quantum-Well CCD Spatial Light Modulators", Proc. SPIE 0825, Spatial Light Modulators and Applications II, (19 February 1988); https://doi.org/10.1117/12.941978

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