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28 February 2012 Computational study of multi-color InGaN/GaN nanowire LEDs with continuously varied indium composition
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Gallium nitride based light emitting diodes have emerged as powerful devices which could replace incandescent and fluorescent lamps within the next years. The development of phosphor-free white LEDs is an ongoing field of research because of the lack of high efficiency green LEDs. A promising approach is the growth of InGaN/GaN nanowires with a continuously varied Indium content along the structure. The graded mole fraction profile is supposed to yield a multitude of emission colors due to many emission levels which can sum up to white light emission. The formation of strain and polarization charges is reduced because of the incremental varying lattice constants in combination with the facility of lateral relaxation of the wire. We report on the computational analysis of those nanowire structures in order to understand the electroluminescent behavior. The simulation software calculates the electrostatic potential and the carrier densities in the entire structure by solving the Poisson and the drift/diffusion equations in three dimensions. The luminescence is determined on the basis of a free carrier theory and enters the continuity equations as recombination term with strain and polarization effects included. This comprehensive physical model is employed to analyze carrier injection and luminescence for a white light-emitter design.
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Marcus Deppner, Marko Bjelica, Friedhard Römer, and Bernd Witzigmann "Computational study of multi-color InGaN/GaN nanowire LEDs with continuously varied indium composition", Proc. SPIE 8255, Physics and Simulation of Optoelectronic Devices XX, 82550G (28 February 2012); doi: 10.1117/12.906664;

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