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28 February 2012 Realization of a photonic crystal surface emitting laser through GaAs based regrowth
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Abstract
Recently, there has been much interest in a novel type of device, the 2D photonic crystal surface emitting laser (PCSEL). For commercialization of these devices a robust and high reliability manufacturing method is required. Previous GaAs wafer fusion and GaN regrowth techniques have utilised voids within the photonic crystal which suffer from reliability and reproducibility issues. We demonstrate a GaAs based PCSEL structure which uses epitaxial regrowth to completely infill the etched structure. We discuss the design, epitaxy, and operating characteristics of these devices over a range of temperatures.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
David M. Williams, Kristian M. Groom, David T. D. Childs, Ben J. Stevens, Salam Khamas, Tim S. Roberts, Richard J. E. Taylor, Richard A. Hogg, Naoki Ikeda, and Yoshimasa Sugimoto "Realization of a photonic crystal surface emitting laser through GaAs based regrowth", Proc. SPIE 8255, Physics and Simulation of Optoelectronic Devices XX, 82550Z (28 February 2012); https://doi.org/10.1117/12.908373
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