28 February 2012 Carrier dynamics and defects in MOVPE-grown bulk InGaAs layers with metamorphic InGaAs and InGaPSb buffer layers for solar cells
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Abstract
Bulk InGaAs layers with a 1eV band-gap grown on GaAs substrates are attractive for high efficiency multi-junction solar cells. However, a large amount of lattice mismatch between bulk InGaAs layer and GaAs substrate necessitates development of novel metamorphic buffer layers (MBL). A number of research groups have reported various MBLs for applications including HBTs, HEMTs, lasers, and solar cells. In this study, we report carrier dynamics and defects in MOVPE-grown bulk InGaAs layers (Eg = ~ 1.0 - 1.1 eV at 300K) with two different types of MBLs including InGaAs and InGaPSb. We also report the effect of chemical-mechanical polishing (CMP) process on carrier lifetimes and the properties of the films subsequently grown on top of the MBL. We employed time-resolved photoluminescence (TR-PL) techniques to study carrier dynamics in InxGa1-xAs samples with and without the CMP process and a high resolution TEM to study defects in various structures.
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Yongkun Sin, Yongkun Sin, Stephen D. LaLumondiere, Stephen D. LaLumondiere, Brendan J. Foran, Brendan J. Foran, William T. Lotshaw, William T. Lotshaw, Steven C. Moss, Steven C. Moss, Tae Wan Kim, Tae Wan Kim, Peter Dudley, Peter Dudley, Jeremy Kirch, Jeremy Kirch, Steven Ruder, Steven Ruder, Luke J. Mawst, Luke J. Mawst, Thomas F. Kuech, Thomas F. Kuech, } "Carrier dynamics and defects in MOVPE-grown bulk InGaAs layers with metamorphic InGaAs and InGaPSb buffer layers for solar cells", Proc. SPIE 8255, Physics and Simulation of Optoelectronic Devices XX, 825516 (28 February 2012); doi: 10.1117/12.906424; https://doi.org/10.1117/12.906424
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