Photovoltaic properties of silicon nanocrystals in silicon carbide

P. Löper; A. Witzky; A. Hartel; S. Gutsch; D. Hiller; J. C. Goldschmidt; S. Janz; S. W. Glunz; M. Zacharias

doi:10.1117/12.906669

21 February 2012 Photovoltaic properties of silicon nanocrystals in silicon carbide

P. Löper, A. Witzky, A. Hartel, S. Gutsch, D. Hiller, J. C. Goldschmidt, S. Janz, S. W. Glunz, M. Zacharias

Proceedings Volume 8256, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices; 82560G (2012) https://doi.org/10.1117/12.906669
Event: SPIE OPTO, 2012, San Francisco, California, United States

Abstract

Silicon nanocrystal quantum dots in a dielectric matrix form a material with higher band gap than silicon, but still compatible with silicon technology. So far, devices using silicon nanocrystals have been realized either on silicon wafers, or using in-situ doping in the superlattice deposition which may hinder the nanocrystal formation. In this paper, a vertical PIN device is presented which allows to investigated the electrical and photovoltaic properties of nanocrystal quantum dot layers. The device structure circumvents any influence of a substrate wafer or dopants and provides full flexibility in the material choice of both, i.e. electron and hole, contacts. Furthermore, not-high-temperature stable contact materials can be applied. Devices have been realized using SiC/Si nanocrystal multilayers as the i-region and doped a-SixC1-x:H layers as electron and hole contacts. First devices show open-circuit voltage of up to 400mV.

Citation Download Citation

P. Löper, A. Witzky, A. Hartel, S. Gutsch, D. Hiller, J. C. Goldschmidt, S. Janz, S. W. Glunz, and M. Zacharias "Photovoltaic properties of silicon nanocrystals in silicon carbide", Proc. SPIE 8256, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices, 82560G (21 February 2012); https://doi.org/10.1117/12.906669

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