21 February 2012 Photovoltaic properties of silicon nanocrystals in silicon carbide
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Abstract
Silicon nanocrystal quantum dots in a dielectric matrix form a material with higher band gap than silicon, but still compatible with silicon technology. So far, devices using silicon nanocrystals have been realized either on silicon wafers, or using in-situ doping in the superlattice deposition which may hinder the nanocrystal formation. In this paper, a vertical PIN device is presented which allows to investigated the electrical and photovoltaic properties of nanocrystal quantum dot layers. The device structure circumvents any influence of a substrate wafer or dopants and provides full flexibility in the material choice of both, i.e. electron and hole, contacts. Furthermore, not-high-temperature stable contact materials can be applied. Devices have been realized using SiC/Si nanocrystal multilayers as the i-region and doped a-SixC1-x:H layers as electron and hole contacts. First devices show open-circuit voltage of up to 400mV.
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P. Löper, P. Löper, A. Witzky, A. Witzky, A. Hartel, A. Hartel, S. Gutsch, S. Gutsch, D. Hiller, D. Hiller, J. C. Goldschmidt, J. C. Goldschmidt, S. Janz, S. Janz, S. W. Glunz, S. W. Glunz, M. Zacharias, M. Zacharias, } "Photovoltaic properties of silicon nanocrystals in silicon carbide", Proc. SPIE 8256, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices, 82560G (21 February 2012); doi: 10.1117/12.906669; https://doi.org/10.1117/12.906669
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