Paper
21 February 2012 Simulation of novel InAlAsSb solar cells
Matthew P. Lumb, Maria Gonzalez, Igor Vurgaftman, Jerry R. Meyer, Joshua Abell, Michael Yakes, Raymond Hoheisel, Joseph G. Tischler, Phillip P. Jenkins, Paul N. Stavrinou, Markus Fuhrer, Ned J. Ekins-Daukes, Robert J. Walters
Author Affiliations +
Abstract
This work uses simulations to predict the performance of InAlAsSb solar cells for use as the top cell of triple junction cells lattice matched to InP. The InP-based material system has the potential to achieve extremely high efficiencies due the availability of lattice matched materials close to the ideal bandgaps for solar energy conversion. The band-parameters, optical properties and minority carrier transport properties are modeled based on literature data for the InAlAsSb quaternary, and an analytical drift-diffusion model is used to realistically predict the solar cell performance.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Matthew P. Lumb, Maria Gonzalez, Igor Vurgaftman, Jerry R. Meyer, Joshua Abell, Michael Yakes, Raymond Hoheisel, Joseph G. Tischler, Phillip P. Jenkins, Paul N. Stavrinou, Markus Fuhrer, Ned J. Ekins-Daukes, and Robert J. Walters "Simulation of novel InAlAsSb solar cells", Proc. SPIE 8256, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices, 82560S (21 February 2012); https://doi.org/10.1117/12.909324
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Cited by 40 scholarly publications.
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KEYWORDS
Solar cells

Dielectrics

Binary data

Solar energy

Data modeling

Energy efficiency

Performance modeling

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