21 February 2012 Simulation of novel InAlAsSb solar cells
Author Affiliations +
Proceedings Volume 8256, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices; 82560S (2012); doi: 10.1117/12.909324
Event: SPIE OPTO, 2012, San Francisco, California, United States
Abstract
This work uses simulations to predict the performance of InAlAsSb solar cells for use as the top cell of triple junction cells lattice matched to InP. The InP-based material system has the potential to achieve extremely high efficiencies due the availability of lattice matched materials close to the ideal bandgaps for solar energy conversion. The band-parameters, optical properties and minority carrier transport properties are modeled based on literature data for the InAlAsSb quaternary, and an analytical drift-diffusion model is used to realistically predict the solar cell performance.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Matthew P. Lumb, Maria Gonzalez, Igor Vurgaftman, Jerry R. Meyer, Joshua Abell, Michael Yakes, Raymond Hoheisel, Joseph G. Tischler, Phillip P. Jenkins, Paul N. Stavrinou, Markus Fuhrer, Ned J. Ekins-Daukes, Robert J. Walters, "Simulation of novel InAlAsSb solar cells", Proc. SPIE 8256, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices, 82560S (21 February 2012); doi: 10.1117/12.909324; https://doi.org/10.1117/12.909324
PROCEEDINGS
13 PAGES


SHARE
KEYWORDS
Solar cells

Dielectrics

Binary data

Solar energy

Data modeling

Energy efficiency

Performance modeling

Back to Top