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28 February 2012 Spectroscopic analysis of InAs quantum dot solar cells
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Abstract
The operation of solar cells incorporating multiple repeat units of InAs quantum dot structures, as well as those with and without δ-doping of 4 and 8 electrons per quantum dot, were studied. Room temperature measurements of these samples revealed high quality devices, but insignificant differences between δ-doped samples and undoped samples. An IR-pumped quantum efficiency measurement was performed at 6 K to probe the extraction of quantum confined carriers through a two-photon process while shutting off phonon-assisted extraction. No two-photon signal rose above the noise, but additional sub-bandgap illuminated IV curves revealed current generation in the quantum dot devices, suggesting the dominant carrier removal mechanism is through tunneling. Finally, dark-diode data was taken and fit to determine ideality factor as a function of temperature. Control devices had an overall larger ideality, while QD devices exhibited variations as a function of temperature, which were attributed to kinetic barriers in the first QD layers, as well as possible Auger recombination at very low temperature.
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Stephen J. Polly, Christopher G. Bailey, Zachary S. Bittner, Yushuai Dai, Elias G. Fernandez, and Seth M. Hubbard "Spectroscopic analysis of InAs quantum dot solar cells", Proc. SPIE 8256, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices, 825615 (28 February 2012); https://doi.org/10.1117/12.911004
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