21 February 2012 A novel method to eliminate the measurement artifacts of external quantum efficiency of multi-junction solar cells caused by the shunt effect
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Abstract
A pulsed voltage bias method is proposed to eliminate the measurement artifacts of external quantum efficiency (EQE) of multi-junction solar cells. Under the DC voltage and light biases in the EQE measurements, the output current and voltage drops on the subcells under the chopped monochromatic light are affected by the low shunt resistances of the Ge subcells, which cause the EQE measurement artifacts for InGaP/InGaAs/Ge triple junction solar cells. A pulsed voltage bias superimposed on the DC voltage and light biases is used to properly control the output current and subcell voltages to eliminate the measurement artifacts. SPICE simulation confirms that the proposed method completely removes the measurement artifacts.
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Jing-Jing Li, Swee Hoe Lim, Yong-Hang Zhang, "A novel method to eliminate the measurement artifacts of external quantum efficiency of multi-junction solar cells caused by the shunt effect", Proc. SPIE 8256, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices, 825616 (21 February 2012); doi: 10.1117/12.912790; https://doi.org/10.1117/12.912790
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