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22 February 2012 Characteristics of bulk InGaAsN and InGaAsSbN materials grown by metal organic vapor phase epitaxy (MOVPE) for solar cell application
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Abstract
Bulk, lattice-matched InGaAsSbN material has been grown by metal organic vapor phase epitaxy (MOVPE) for applications in concentrated multi-junction solar cells. By optimizing the growth conditions for high Sb and As partial pressures, we achieved background hole concentrations as low as 2 x 1018 cm-3. After thermal annealing, the background hole concentration increased from 2x1018 to 2 x 1019 cm-3, although PL intensity increased by a factor of 7. We recently grew single junction (1eV) solar cells incorporating dilute-nitride materials and devices were fabricated and characterized for solar cell application. Performance characteristics of these cells without anti-reflection coating included the efficiency of 4.25% under the AM1.5 (air mass) direct illumination, Voc of 0.7 V, and a spectral response extended to longer wavelength compared with GaAs cells.
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TaeWan Kim, Toby J. Garrod, Kangho Kim, Jaejin Lee, Luke J. Mawst, T. F. Kuech, S. D. LaLumondiere, Y. Sin, W. T. Lotshaw, and S. C. Moss "Characteristics of bulk InGaAsN and InGaAsSbN materials grown by metal organic vapor phase epitaxy (MOVPE) for solar cell application", Proc. SPIE 8256, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices, 82561D (22 February 2012); https://doi.org/10.1117/12.906961
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