Intersubband and intrasubband transition in InGaN quantum dot for solar cell application

Kuang-Chung Wang; Yuh-Renn Wu

doi:10.1117/12.908674

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21 February 2012 Intersubband and intrasubband transition in InGaN quantum dot for solar cell application

Kuang-Chung Wang; Yuh-Renn Wu

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Proceedings Volume 8256, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices; 82561F (2012) https://doi.org/10.1117/12.908674
Event: SPIE OPTO, 2012, San Francisco, California, United States

Abstract

This paper studies the feasibility of using GaN/InGaN quantum dot as the Intermediate Band Solar Cell. Different dot sizes are compared and the result shows significant differences due to the quantum confinement strength. The band structure and transition rate in the quantum dot are calculated. For the smaller quantum dot, the efficiency is much higher because of the larger separation of IB band to conduction band. However, the contribution of intermediate bands is small and the bottle neck is found as the low transition rate between IBs and bulk state.

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Kuang-Chung Wang and Yuh-Renn Wu "Intersubband and intrasubband transition in InGaN quantum dot for solar cell application", Proc. SPIE 8256, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices, 82561F (21 February 2012); https://doi.org/10.1117/12.908674

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