Radiation effects on quantum dot enhanced solar cells

Christopher Kerestes; David Forbes; Christopher G. Bailey; John Spann; Benjamin Richards; Paul Sharps; Seth Hubbard

doi:10.1117/12.910835

21 February 2012 Radiation effects on quantum dot enhanced solar cells

Christopher Kerestes, David Forbes, Christopher G. Bailey, John Spann, Benjamin Richards, Paul Sharps, Seth Hubbard

Proceedings Volume 8256, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices; 82561I (2012) https://doi.org/10.1117/12.910835
Event: SPIE OPTO, 2012, San Francisco, California, United States

Abstract

Radiation tolerance of quantum dot (QD) enhanced solar cells has been measured and modeled. GaAs solar cells enhanced with 10, 20, 40, 60, and 100X layers of strain compensated QDs are compared to baseline devices without QDs. Radiation resistance of the QD layers is higher than the bulk material. Increasing the number of QD layers does not lead to a systematic decrease in QD response throughout the course of radiation exposure. Additionally, InGaP/(In)GaAs/Ge triple junction solar cells with and without 10 layers of strain compensated QDs in the (In)GaAs triple junction solar cells are analyzed. Triple junction solar cells with QDs have a better resistance to Voc degradation but these samples have a degradation in Isc that leads to lower radiation resistance for power output.

Citation Download Citation

Christopher Kerestes, David Forbes, Christopher G. Bailey, John Spann, Benjamin Richards, Paul Sharps, and Seth Hubbard "Radiation effects on quantum dot enhanced solar cells", Proc. SPIE 8256, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices, 82561I (21 February 2012); https://doi.org/10.1117/12.910835

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