21 February 2012 Radiation effects on quantum dot enhanced solar cells
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Abstract
Radiation tolerance of quantum dot (QD) enhanced solar cells has been measured and modeled. GaAs solar cells enhanced with 10, 20, 40, 60, and 100X layers of strain compensated QDs are compared to baseline devices without QDs. Radiation resistance of the QD layers is higher than the bulk material. Increasing the number of QD layers does not lead to a systematic decrease in QD response throughout the course of radiation exposure. Additionally, InGaP/(In)GaAs/Ge triple junction solar cells with and without 10 layers of strain compensated QDs in the (In)GaAs triple junction solar cells are analyzed. Triple junction solar cells with QDs have a better resistance to Voc degradation but these samples have a degradation in Isc that leads to lower radiation resistance for power output.
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Christopher Kerestes, Christopher Kerestes, David Forbes, David Forbes, Christopher G. Bailey, Christopher G. Bailey, John Spann, John Spann, Benjamin Richards, Benjamin Richards, Paul Sharps, Paul Sharps, Seth Hubbard, Seth Hubbard, } "Radiation effects on quantum dot enhanced solar cells", Proc. SPIE 8256, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices, 82561I (21 February 2012); doi: 10.1117/12.910835; https://doi.org/10.1117/12.910835
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