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19 March 2012 Middle infrared LEDs: key element for new generation chemical sensors
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Proceedings Volume 8257, Optical Components and Materials IX; 82571E (2012)
Event: SPIE OPTO, 2012, San Francisco, California, United States
Optical chemical sensors are the only ones, which are truly gas specific and reliable. But up to now wide application of portable gas sensors is limited by imperfections of currently used heating infrared sources. Recently qualitative technological break-through in growing of narrow band-gap heterostructures was achieved. Full line high effective LEDs for the spectral range 1600-5000 nm and spectral matched photodiodes were developed. For developing of LEDs and PDs we use lattice-matched heterostructures with GaInAsSb quaternary solid solutions in the active layer. It becomes possible to create gas sensors that meet all demands of the mass market: compactness; low electrical power consumption; high selectivity; high sensitivity; long life-time without additional calibration and low cost in mass production. Average optical power up to 3.5 mW and peak power up to 170 mW was achieved for 1600-2400 nm LEDs. Optical power of 3000-5000 nm LEDs is still quite low but absorption of CO2 and CH4 in this spectral range is very strong, so creation of simple designs of high sensitive gas sensors is possible. Small sizes of LED chips gives us possibility to design multicomponent LED matrices. This fact provides additional advantages over the thermal infrared sources.
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Nikolay D. Stoyanov, Khafiz M. Salikhov, Karina V. Kalinina, Bizhigit E. Zhurtanov, and Sergey S. Kizhaev "Middle infrared LEDs: key element for new generation chemical sensors", Proc. SPIE 8257, Optical Components and Materials IX, 82571E (19 March 2012);

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