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20 February 2012 One- and two-photon indirect injection of carriers and spins in silicon
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Abstract
Using an empirical pseudopoential description of electron states and an adiabatic bond charge model for phonon states, a full band structure calculation is performed for the one- and two-photon indirect optical injection of carriers and spins in bulk silicon. The calculated one- and two-photon absorption coefficients are in agreement with experiments. For σ- light propagation direction along 001, the carrier and spin injection rates and the degree of spin polarization show strong valley anisotropy. The carrier injection rates in the Z valleys are larger than that in the X valley. Furthermore, the two photon indirect carrier injection shows anisotropy and linear-circular dichroism with respect to the light propagation direction.
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J. L. Cheng, J. Rioux, J. Fabian, and J. E. Sipe "One- and two-photon indirect injection of carriers and spins in silicon", Proc. SPIE 8260, Ultrafast Phenomena and Nanophotonics XVI, 826007 (20 February 2012); https://doi.org/10.1117/12.910737
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