20 February 2012 Engineering high harmonic generation in semiconductors via pulse shaping
Author Affiliations +
Abstract
High harmonic generation is investigated for a two-band model of a semiconductor nanostructure. Similar to an atomic two-level system, the semiconductor emits high harmonic radiation. We show how one can specifically enhance the emission for a given frequency by applying a non-trivially shaped laser pulse. Therefore, the semiconductor Bloch equations including the interband and additionally the intraband dynamics are solved numerically and the spectral shape of the input pulse is computed via an optimization algorithm. It is demonstrated that desired emission frequencies can be favored even though the overall input power is kept constant. We also suggest special metallic nano geometries to achieve enhanced localized optical fields. They are found by geometric optimization.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Matthias Reichelt, Andre Hildebrandt, Andrea Walther, Jens Förstner, Torsten Meier, "Engineering high harmonic generation in semiconductors via pulse shaping", Proc. SPIE 8260, Ultrafast Phenomena and Nanophotonics XVI, 82601L (20 February 2012); doi: 10.1117/12.906338; https://doi.org/10.1117/12.906338
PROCEEDINGS
7 PAGES


SHARE
Back to Top