23 February 2012 Critical comparison of GaAs and InGaAs THz photoconductors
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Proceedings Volume 8261, Terahertz Technology and Applications V; 826102 (2012) https://doi.org/10.1117/12.914028
Event: SPIE OPTO, 2012, San Francisco, California, United States
Abstract
Ultrafast photoconductors have been an enabling device technology in the THz field during the past decade. And their implementation is now worldwide in time- and frequency-domains systems of various types. While the technological push is towards InGaAs or similar photoconductors operating at 1550 nm, the GaAs-based devices operating around 800 nm still provide superior performance and robustness in most cases. This paper contrasts the GaAs and 1550-nm devices in terms of materials design and solid-state metrics such as electron-hole lifetime, carrier mobility, and resistivity. It also summarizes the main materials developed over the past 20 years.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. Martin, M. Martin, E. R. Brown, E. R. Brown, } "Critical comparison of GaAs and InGaAs THz photoconductors", Proc. SPIE 8261, Terahertz Technology and Applications V, 826102 (23 February 2012); doi: 10.1117/12.914028; https://doi.org/10.1117/12.914028
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