1 March 2012 Portable terahertz spectrometer with InP related semiconductor photonic devices
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Proceedings Volume 8261, Terahertz Technology and Applications V; 826103 (2012) https://doi.org/10.1117/12.907629
Event: SPIE OPTO, 2012, San Francisco, California, United States
Abstract
We demonstrate several optical beating sources based on 1.55 μm photonic devices. Broadband antenna-integrated, low-temperature-grown (LTG) InGaAs photomixers for widely tunable continuous-wave THz generation and detection are also verified. The novel optical beat sources show a beat frequency tuning range from 0.3THz to over 1.34 THz. The dual-mode laser diode (DML) consists of one phase and two active sections. Micro-heaters are used to independently tune the wavelengths of the two DML laser modes. Broadband antenna-integrated, LTG InGaAs photomixers are used as THz wave generators and detectors. This use of 1.55 μm photonic devices could connect current THz and InP-based communication technologies because the well-developed InP-based optoelectronic technologies are already expected to enable the integration of tunable LD sources with other optical components such as semiconductor optical amplifiers (SOAs), electro-absorption modulators, and waveguide-type THz photomixers. As well as realizing an optical fibercoupled THz time-domain spectroscopy (TDS) system, we also successfully achieved continuous frequency tuning of the CW THz emissions. Our results show that photomixing using the photonic devices is a promising approach to realize compact, cost-effective, and portable THz spectrometer.
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Kyung Hyun Park, Namje Kim, Hyunsung Ko, Han-Cheol Ryu, Jung-Woo Park, Sang-Pil Han, Min Yong Jeon, "Portable terahertz spectrometer with InP related semiconductor photonic devices", Proc. SPIE 8261, Terahertz Technology and Applications V, 826103 (1 March 2012); doi: 10.1117/12.907629; https://doi.org/10.1117/12.907629
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