We explore terahertz imaging with CMOS field-effect transistors exploiting their plasmonic detection capability and the
advantages of CMOS technology for the fabrication of THz cameras with respect to process stability, array uniformity,
ease of integration of additional functionality, scalability and cost-effectiveness. A 100×100-pixel camera with an active
area of 20×20 mm² is physically simulated by scanning single detectors and groups of a few detectors in the image plane.
Using detectors with a noise-equivalent power of 43 pW/√Hz, a distributed illumination of 432 μW at 591.4 GHz, and an
integration time of 20 ms (for a possible frame rate of 17 fps), this virtual camera allows to obtain images with a
dynamic range of at least 20 dB and a resolution approaching the diffraction limit. Imaging examples acquired in direct
and heterodyne detection mode, and in transmission and reflection geometry, show the potential for real-time operation.
It is demonstrated that heterodyning (i) improves the dynamic range substantially even if the radiation from the local
oscillator is distributed over the camera area, and (ii) allows sensitive determination of object-induced phase changes,
which promises the realization of coherent imaging systems.