Auger effect in nonpolar quantum wells

Lukas Schade; Ulrich T. Schwarz; Tim Wernicke; Jens Rass; Simon Ploch; Markus Weyers; Michael Kneissl

doi:10.1117/12.905955

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27 February 2012 Auger effect in nonpolar quantum wells

Lukas Schade, Ulrich T. Schwarz, Tim Wernicke, Jens Rass, Simon Ploch, Markus Weyers, Michael Kneissl

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Proceedings Volume 8262, Gallium Nitride Materials and Devices VII; 82620K (2012) https://doi.org/10.1117/12.905955
Event: SPIE OPTO, 2012, San Francisco, California, United States

Abstract

Optical polarization properties of nonpolar quantum wells and their efficiency droop at high charge carrier densities are discussed. Therefore, a photoluminescence experiment connecting both characteristics is presented. The additional property of polarization resolution provides information about the two lowest interband transitions and the occupation of holes in the two highest valence subbands. The ratio of occupation in the two subbands is a direct projection of the Fermi-Dirac statistics. Because of the carrier dependency of the Auger losses, the quantum well internal efficiency drops in the high charge carrier regime. Here, we observe that the peak of the internal quantum efficiency of the individual subband occurs at different excitation densities as a direct consequence of the Fermi-Dirac statistics.

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Lukas Schade, Ulrich T. Schwarz, Tim Wernicke, Jens Rass, Simon Ploch, Markus Weyers, and Michael Kneissl "Auger effect in nonpolar quantum wells", Proc. SPIE 8262, Gallium Nitride Materials and Devices VII, 82620K (27 February 2012); https://doi.org/10.1117/12.905955

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