High pressure annealing of Europium implanted GaN

K. Lorenz; S. M. C. Miranda; E. Alves; I. S. Roqan; K. P. O'Donnell; M. Boćkowski

doi:10.1117/12.906810

27 February 2012 High pressure annealing of Europium implanted GaN

K. Lorenz, S. M. C. Miranda, E. Alves, I. S. Roqan, K. P. O'Donnell, M. Boćkowski

Author Affiliations +

Proceedings Volume 8262, Gallium Nitride Materials and Devices VII; 82620C (2012) https://doi.org/10.1117/12.906810
Event: SPIE OPTO, 2012, San Francisco, California, United States

Abstract

GaN epilayers were implanted with Eu to fluences of 1×10¹³ Eu/cm² and 1×10¹⁵ Eu/cm². Post-implant thermal annealing was performed in ultra-high nitrogen pressures at temperatures up to 1450 ºC. For the lower fluence effective structural recovery of the crystal was observed for annealing at 1000 ºC while optical activation could be further improved at higher annealing temperatures. The higher fluence samples also reveal good optical activation; however, some residual implantation damage remains even for annealing at 1450 ºC which leads to a reduced incorporation of Eu on substitutional sites, a broadening of the Eu luminescence lines and to a strongly reduced fraction of optically active Eu ions. Possibilities for further optimization of implantation and annealing conditions are discussed.

Citation Download Citation

K. Lorenz, S. M. C. Miranda, E. Alves, I. S. Roqan, K. P. O'Donnell, and M. Boćkowski "High pressure annealing of Europium implanted GaN", Proc. SPIE 8262, Gallium Nitride Materials and Devices VII, 82620C (27 February 2012); https://doi.org/10.1117/12.906810

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